NP-Bismuth Telluride Cubes

Description

Thermoelectric material Bismuth Telluride appears as gray or black hexagonal platelets with a metallic luster, we can provide doped and un-doped Bismuth telluride in cube or rod form, the size of BI2TE3 an be customized based on your requirements. Doped Bismuth Telluride is a narrow gap layered semiconductor with a trigonal unit cell. It is a semiconductor which, when alloyed with antimony or selenium is an efficient thermoelectric material for refrigeration or power generation.

Performance Specification	P-Type	N-Type	Un-Doped Bi2Te3
Density (gcm-3)	6.5	7.85	7.64
Electrical Conductivity σ(102Sm-1)	800 -1200	800 – 1250	1050±5%
Seebeck Coefficient α(μVK-1)	200 – 230	180 -230	210-230
Thermal Conductivity κ(Wm-1K-1)	1.2  ~ 1.6	1.2 ~ 1.6	1.65±5%
ZT Value	≥ 1.1	≥1.0	0.8-0.95
Typical Plating Thickness	Ni=3-4 μm, Sn=1-2 μm or custom based on requirement.		–

Applications:

-Thermoelectric material
-Making semiconductor refrigeration sheet
-Portable refrigerator, thermostatic device
-Temperature difference power generation

Bismuth telluride-based thermoelectric semiconductors are high-performance thermoelectric conversion materials in the middle and low temperature areas. They are widely used in local refrigeration and precise temperature control in the fields of microelectronics, computers, and aerospace. They have good application prospects in industrial waste heat recovery and thermoelectric power generation.

Through alloying doping, phonon scattering can be enhanced to reduce the thermal conductivity of the lattice, and the carrier concentration can be optimized to improve the electrical performance, thereby improving the thermoelectric performance of the bismuth telluride-based material.

Advantages

• Less content of heavy metals like Cu, Pb, As, Sb, Cd, Ni, Cr.
• Provide a complete set of test reports including TDS, CoA, Coating Report and Curve Data of Electrical & thermal conductivity, ZT value with temperature for each batch.
• Free Sample Support for preliminary test, secondary testing and triple test to verify the consistent quality of different batches.
• Ready to ship, fast delivery from ready stock within 20 KG usually.
• According to the low range of raw material cost, our quotation is calculated to save customer costs.
• Vacuum package to prevent oxidation and pollution.
• Technical support within 60 minutes by e-mail, calling or instant message.
• ISO9001 and ISO14001 certificated manufacturer.

Q&A

1. What are the key properties of doped and undoped Bismuth Telluride (Bi2Te3) for thermoelectric applications?

Doped Bismuth Telluride: Doped versions of Bi2Te3, alloyed with elements like antimony or selenium, exhibit high electrical conductivity (800-1250 S/cm for N-Type and P-Type) and a significant Seebeck coefficient (180-230 μV/K). These properties make them efficient for thermoelectric applications such as refrigeration and power generation.

Undoped Bi2Te3: Undoped Bi2Te3 retains a balance of properties suitable for thermoelectric use, with a slightly lower electrical conductivity (1050 S/cm) and a comparable Seebeck coefficient (210-230 μV/K). Its thermal conductivity (1.65 W/m·K) and ZT value (0.8-0.95) are optimized for specific thermoelectric applications.

2. What are the typical applications of Bismuth Telluride-based thermoelectric materials?

Bismuth Telluride-based thermoelectric materials find application in various fields:

Thermoelectric Devices: Used in semiconductor refrigeration sheets and devices due to their ability to generate cooling or heating effects based on temperature differentials.

Portable Refrigerators and Thermostatic Devices: Implemented in compact cooling systems for precise temperature control, suitable for applications in medical devices, portable refrigeration units, and more.

Power Generation: Utilized in thermoelectric generators to convert waste heat into electrical power, promoting energy efficiency in industrial settings and automotive applications.